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| IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 OptiMOS(R)-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 60 2.4 120 PG-TO262-3-1 V m A Features * N-channel - Enhancement mode * AEC qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green Product (RoHS compliant) * 100% Avalanche tested PG-TO263-3-2 PG-TO220-3-1 Type IPB120N06S4-02 IPI120N06S4-02 IPP120N06S4-02 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0602 4N0602 4N0602 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25C, V GS=10V T C=100C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25C T C=25C I D=60A Value 120 120 480 560 120 20 188 -55 ... +175 55/175/56 mJ A V W C Unit A Rev. 1.2 page 1 2009-07-01 IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0V, I D= 1mA V GS(th) I DSS V DS=V GS, I D=140A V DS=60V, V GS=0V V DS=60V, V GS=0V, T j=125C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20V, V DS=0V V GS=10V, I D=100A V GS=10V, I D=100A, SMD version 60 2.0 3.0 0.01 10 2.4 2.0 4.0 1 200 100 2.8 2.4 nA m A V 0.8 62 62 40 K/W Values typ. max. Unit Rev. 1.2 page 2 2009-07-01 IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage IS I S,pulse V SD T C=25C V GS=0V, I F=100A, T j=25C V R=30V, I F=50A, di F/dt =100A/s 0.9 120 480 1.3 V A Q gs Q gd Qg V plateau V DD=48V, I D=120A, V GS=0 to 10V 63 15 150 5.2 85 30 195 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=30V, V GS=10V, I D=120A, R G=3.5 V GS=0V, V DS=25V, f =1MHz 12120 2980 110 25 5 50 10 15750 pF 3870 220 ns Values typ. max. Unit Reverse recovery time2) t rr - 190 - ns Reverse recovery charge2) 1) Q rr - 170 - nC Current is limited by bondwire; with an R thJC = 0.8K/W the chip is able to carry 206A at 25C. Defined by design. Not subject to production test. 2) 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.2 page 3 2009-07-01 IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 1 Power dissipation P tot = f(T C); V GS 6 V 2 Drain current I D = f(T C); V GS 6 V; SMD 200 175 150 125 140 120 100 P tot [W] 80 100 75 50 25 0 0 50 100 150 200 40 I D [A] 60 20 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D = f(V DS); T C = 25 C; D = 0; SMD parameter: t p 1000 1 s 10 s 100 s 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 100 0.5 100 1 ms 10-1 0.1 Z thJC [K/W] I D [A] 0.05 0.01 10 10 -2 single pulse 1 0.1 1 10 100 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.2 page 4 2009-07-01 IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 5 Typ. output characteristics I D = f(V DS); T j = 25 C; SMD parameter: V GS 480 420 360 300 7 10 V 8V 7V 6.5 V 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 C; SMD parameter: V GS 5.5 V 6V 6.5 V 9 240 180 120 60 0 0 1 2 3 4 R DS(on) [m] 6V I D [A] 5 5.5 V 7V 3 8V 10 V 1 0 120 240 360 480 V DS [V] I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 480 420 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 100 A; V GS = 10 V; SMD 4 3.5 360 300 3 240 180 120 60 0 3 4 5 6 7 175 C R DS(on) [m] 25 C -55 C I D [A] 2.5 2 1.5 1 -60 -20 20 60 100 140 180 V GS [V] T j [C] Rev. 1.2 page 5 2009-07-01 IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 4 105 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 3.5 104 Ciss V GS(th) [V] 3 1400 A C [pF] Coss 103 140 A 2.5 102 2 Crss 1.5 -60 -20 20 60 100 140 180 101 0 5 10 15 20 25 30 T j [C] V DS [V] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Avalanche characteristics I A S= f(t AV) parameter: T j(start) 1000 102 100 25 C 100 C 150 C 175 C 25 C 101 I AV [A] 10 1 1 1.2 1.4 I F [A] 100 0 0.2 0.4 0.6 0.8 0.1 1 10 100 1000 V SD [V] t AV [s] Rev. 1.2 page 6 2009-07-01 IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 13 Avalanche energy E AS = f(T j) parameter: I D 600 66 14 Drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA 500 60 A 64 400 300 V BR(DSS) [V] 62 E AS [mJ] 60 200 58 100 0 25 75 125 175 56 -55 -15 25 65 105 145 T j [C] T j [C] 15 Typ. gate charge V GS = f(Q gate); I D = 120 A pulsed parameter: V DD 10 9 8 7 6 12 V 16 Gate charge waveforms V GS 48 V Qg V GS [V] 5 4 3 2 V g s(th) Q g (th) 1 0 0 40 80 120 160 Q sw Q gs Q gd Q gate Q gate [nC] Rev. 1.2 page 7 2009-07-01 IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2009 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.2 page 8 2009-07-01 IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 Revision History Version Date Changes Update of RthJC and related parameters from 0.6K/W to 22.08.2008 0.8K/W Revision 1.1 Revision 1.2 01.07.2009 Update of SOA diagram Rev. 1.2 page 9 2009-07-01 |
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